b c e npn silicon planar medium power darlington transistor issue 1 ? march 94 features * 160 volt v ceo * gain of 5k at i c =1 amp *p tot = 1 watt applications * lamp, solenoid and relay drivers * replacement of to126 and to220 packages refer to ztx601b for graphs absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 180 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 160 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 10 v i e =100 m a, i c =0 collector cut-off current i cbo 0.01 10 m a m a v cb =160v v cb =160v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =8v, i c =0 colllector-emitter cut-off current i ces 10 m a v ces =160v collector-emitter saturation voltage v ce(sat) 0.75 0.85 1.1 1.2 v v i c =0.5a, i b =5ma* i c =1a, i b =10ma* base-emitter saturation voltage v be(sat) 1.7 1.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 1.5 1.7 v ic=1a, v ce =5v* static forward current transfer ratio h fe 5k 10k 5k 10k 20k 10k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 250 mhz i c =100ma, v ce =10v f=20mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible FXT601B 3-42
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